chapter 1 semiconductor diodes1.1 introduction1.2 semiconductor materials: ge, si, and gaas1.3 covalent bonding and intrinsic materials1.4 extrinsic materials: n-type and p-type materials 1.5 semiconductor diode1.6 ideal versus practical1.7 resistance levels1.8 diode equivalent circuits1.9 transition and diffusion capacitance1.10 reverse recovery time1.11 diode specification sheets 1.12 semiconductor diode notation1.13 zener diodes1.14 light-emitting diodes1.15 summary1.16 computer analysisproblems chapter 2  diode  applications2.1 introduction 2.2 load-line analysis2.3 equivalent model analysis2.4 and/or gates2.5 sinusoidal inputs; half-wave rectification2.6 full-wave rectification2.7 clippers2.8 clampers2.9 zener diodes2.10 summaryproblemschapter 3 bipolar junction transistors3.1 introduction3.2 transistor construction3.3 transistor operation 3.4 common-base configuration3.5 transistor amplifying action 3.6 common-emitter configuration3.7 common-collector configuration3.8 limits of operation3.9 transistor specification sheet3.10 transistor casing and terminal identification 3.11 summaryproblemschapter 4 dc biasing — bjts4.1 introduction4.2 operating point4.3 fixed-bias circuit 4.4 emitter bias4.5 voltage-divider bias4.6 dc bias with voltage feedback 4.7 miscellaneous bias configurations4.8 transistor switching networks 4.9 pnp transistors4.10 bias stabilization 4.11 summaryproblemschapter 5 bjt ac analysis5.1 introduction5.2 amplification in the ac domain 5.3 bjt transistor modeling5.4 the re transistor model5.5 the hybrid equivalent model5.6 hybrid model5.7 variations of transistor parameters5.8 common-emitter fixed-bias configuration 5.9 voltage-divider bias5.10 ce emitter-bias configuration5.11 emitter-follower configuration5.12 common-base configuration5.13 collector feedback configuration5.14 collector dc feedback configuration5.15 determining the current gain5.16 effect of rl and rs5.17 two-port systems approach 5.18 summary table5.19 cascaded systems5.20 darlington connection5.21 feedback pair5.22 current mirror circuits5.23 current source circuits5.24 approximate hybrid equivalent circuit5.25 summaryproblemschapter 6 field-effect transistors 6.1 introduction6.2 construction and characteristics of jfets6.3 transfer characteristics 6.4 specification sheets (jfets)6.5 important relationships6.6 depletion-type mosfet6.7 enhancement-type mosfet6.8 cmos6.9 summary table6.10 summaryproblems chapter 7 fet biasing7.1 introduction 7.2 fixed-bias configuration 7.3 self-bias configuration7.4 voltage-divider biasing 7.5 depletion-type mosfets7.6 enhancement-type mosfets7.7 summary table7.8 combination networks7.9 p-channel fets7.10 summaryproblemschapter 8 fet amplifiers8.1 introduction 8.2 fet small-signal model8.3 jfet fixed-bias configuration8.4 jfet self-bias configuration 8.5 jfet voltage-divider configuration8.6 jfet source-follower(common-drain) configuration8.7 jfet common-gate configuration8.8 depletion-type mosfets8.9 enhancement-type mosfets8.10 e-mosfet drain-feedback configuration8.11 e-mosfet voltage-divider configuration8.12 summary table 8.13 effect of rl and rsig8.14 cascade configuration8.15 summaryproblemschapter 9 bjt and fet frequency response9.1 introduction9.2 general frequency considerations9.3 low-frequency analysis bode plot9.4 low-frequency response bjt amplifier9.5 low-frequency response fet amplifier9.6 miller effect capacitance 9.7 high-frequency response bjt amplifier9.8 high-frequency response fet amplifier9.9 multistage frequency effects9.10 summaryproblemschapter 10 operational amplifiers10.1 introduction 10.2 differential amplifier circuit10.3 differential and common-mode operation 10.4 bifet, bimos, and cmos differential amplifier circuits10.5 op-amp basics10.6 op-amp specificationsdc offset parameters10.7 op-amp specificationsfrequency parameters 10.8 op-amp unit specifications 10.9 summaryproblems chapter 11 op-amp applications11.1