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微機電器件設計.制造及計算機輔助設計 版權信息
- ISBN：9787512421097
- 條形碼：9787512421097 ; 978-7-5124-2109-7
- 裝幀：暫無
- 冊數：暫無
- 重量：暫無
- 所屬分類：>>
微機電器件設計.制造及計算機輔助設計 內容簡介
Thisbookfirstlyintroducesthepertinentfundamentaltheory，importantmaterialandfabricationprocessofmicroＧelectromechanicalsystems．Basedonthesetheories，thedesignruleandimportantengineeringexamplesaredescribedindetail．Then，manyengineeringapplicationsforMEMSincludingtheaccelerationmeasurement，theangularspeedmeasurementandthepressuremeasurementareintroduced．Finally，finiteelementmethodisintroducedinordertoprovethecorrectnessofthedesign．Thisengineeringapplicationofsimulationincludesthestaticandmodalanalysisofthebeam，capacitanceanalysis，thermalＧstructureanalysisofthedeviceandfatigueanalysisetc．Itcanbeselectedasthereferencetothepostgraduates，undergraduatesandpertinentengineeringstaffwhoseresearch directionsareinstrumentationscienceandtechnology，controlscienceandengineering，mechanicalengineeringetc．
微機電器件設計.制造及計算機輔助設計 目錄
Chapter1 Introduction ………………………………………………………………………… 1
1．1 ConceptofMEMS ……………………………………………………………………… 1
1．2 DevelopmentofMEMS ………………………………………………………………… 4
1．3 MEMSCAD …………………………………………………………………………… 9
Chapter2 BasictheoryofMEMS …………………………………………………………… 12
2．1 TheoryofelectrostaticMEMScombactuators …………………………………… 12
2．1．1 Introduction ……………………………………………………………………… 12
2．1．2 Operatingprinciples …………………………………………………………… 13
2．1．3 Platecapacitortheoryinidealcondition ……………………………………… 14
2．1．4 ThemodifiedmodelofMEMSplatecapaciator ……………………………… 17
2．1．5 Calculationofelectrostaticcombdrivingforceinidealsituation …………… 24
2．1．6 Weakcapacitancedetectionmethodofelectrostaticcombdrive …………… 26
2．2 RelevanttheoreticalcalculationsfortheMEMScantileverbeam ………………… 34
2．2．1 Introduction ……………………………………………………………………… 34
2．2．2 Theoreticalcalculationmethodforcantileverbeam ………………………… 35
2．2．3 RelevanttheoreticalcalculationofaxialtensileandcompressiveonsingleGend
clampedbeams ………………………………………………………………… 36
2．2．4 RelatedtheoreticalcalculationsofdoubleGendclampedbeamsaxialtension
andcompression ………………………………………………………………… 40
2．3 MembranetheoryofMEMS ………………………………………………………… 47
2．3．1 Theoryofclampedaroundcirculardiaphragm ………………………………… 48
2．3．2 Theoryofclampedaroundrectangularflatdiaphragm ……………………… 49
References …………………………………………………………………………………… 52
Chapter3 MEMSmaterials …………………………………………………………………… 53
3．1 Monocrystallinesilicon ……………………………………………………………… 53
3．1．1 Introduction ……………………………………………………………………… 53
3．1．2 Crystalorientationofmonocrystallinesilicon ………………………………… 55
3．2 Polycrystallinesilicon ………………………………………………………………… 64
3．3 Silica …………………………………………………………………………………… 66
3．4 Piezoelectricmaterials ………………………………………………………………… 67
3．4．1 Piezoelectriceffectandinversepiezoelectriceffectofmaterials …………… 67
3．4．2 Quartzcrystal …………………………………………………………………… 68
3．4．3 Piezoelectricceramics …………………………………………………………… 73
3．5 OtherMEMSmaterials ……………………………………………………………… 75
3．6 Summary ……………………………………………………………………………… 76
Chapter4 MEMStechnology ………………………………………………………………… 77
4．1 MEMSlithographyprocess ………………………………………………………… 78
4．2 KeytechnologyofMEMSlithographyprocess …………………………………… 80
4．2．1 Wafercleaning …………………………………………………………………… 80
4．2．2 Siliconoxidation ………………………………………………………………… 80
4．2．3 Spincoatingprocess …………………………………………………………… 87
4．2．4 Prebaking ………………………………………………………………………… 90
4．2．5 Exposure ………………………………………………………………………… 92
4．2．6 Development ……………………………………………………………………… 94
4．2．7 Hardening ………………………………………………………………………… 96
4．2．8 FabricationoftheSiO2 window ………………………………………………… 97
4．3 SubsequentprocessofMEMS ……………………………………………………… 98
4．3．1 Bulksilicontechnology ………………………………………………………… 98
4．3．2 Surfacesiliconprocess ………………………………………………………… 103
4．3．3 LIGAtechnology ……………………………………………………………… 104
4．3．4 Sputteringtechnology ………………………………………………………… 105
4．3．5 LiftGoffprocess ………………………………………………………………… 107
4．4 Filmpreparationtechnology………………………………………………………… 107
4．5 Bondingprocess ……………………………………………………………………… 108
4．5．1 Anodicbondingprocess………………………………………………………… 109
4．5．2 SiliconGsilicondirectbonding ………………………………………………… 110
4．5．3 Metaleutecticbonding ………………………………………………………… 113
4．5．4 Coldpressureweldingbonding ……………………………………………… 114
4．6 Engineeringexamplesofcombinationformultipleprocessestofabricatethe
MEMSdevice ………………………………………………………………………… 115
4．6．1 Introduction …………………………………………………………………… 115
4．6．2 EngineeringexampleoffabricationprocessforresonantMEMSgyroscope
…………………………………………………………………………………… 115
4．6．3 EngineeringexampleofelectromagneticmicroGmotorproductionprocess
…………………………………………………………………………………… 118
4．7 Summary ……………………………………………………………………………… 124
References…………………………………………………………………………………… 125
Chapter5 Frictionwearandtearundermicroscale ……………………………………… 126
5．1 OffGchiptestingmethodformicrofriction ………………………………………… 127
5．1．1 MicroGtribologytestwiththepinGonGdiscmeasuringmethod ……………… 127
5．1．2 MicroGtribologytestwithAFM ……………………………………………… 128
5．1．3 MicroGtribologytestwithspecialmeasuringdevice ………………………… 130
5．2 OnGchiptestingmethodformicrofriction ………………………………………… 132
5．2．1 OnGchiptestingmethodactuatedbyelectrostaticforce …………………… 132
5．2．2 OnGchipmicroGfrictiontestingmethodusingthemechanismcharactersof
thebimorphmaterial…………………………………………………………… 139
5．3 ExampleofthedesignforanonGchipmicroGfrictionstructure ………………… 141
5．3．1 Structureandworkingprinciple ……………………………………………… 141
5．3．2 Calculationofpertinenttheory ……………………………………………… 142
5．3．3 Technologicalanalysisofstructuraldesign ………………………………… 148
5．3．4 Testingresultsanddataanalysis……………………………………………… 152
5．3．5 ResearchandtestofwearproblemofMEMSdevices ……………………… 161
5．4 Summary ……………………………………………………………………………… 165
References…………………………………………………………………………………… 165
Chapter6 MEMStestingtechnologyandengineeringapplication ………………………… 169
6．1 Accelerationmeasurementandcorrespondingsensors …………………………… 169
6．1．1 Workingprincipleoftheaccelerationsensorandtheclassification ……… 170
6．1．2 Capacitivesiliconmicromechanicalaccelerometer …………………………… 172
6．1．3 Piezoresistivesiliconmicromechanicalaccelerometer ……………………… 173
6．1．4 Piezoelectricmicromechanicalaccelerometer ………………………………… 174
6．1．5 ResonantsiliconMEMSaccelerometer ……………………………………… 175
6．2 Angularspeedmeasurementandcorrespondingsensors ………………………… 177
6．2．1 Workingprinciple ……………………………………………………………… 177
6．2．2 DevelopmentofMEMSgyroscope …………………………………………… 178
6．2．3 Classificationofmicromechanicalgyroscope ………………………………… 188
6．3 Pressuremeasurementandcorrespondingsensors ……………………………… 190
6．3．1 Workingpincinple ……………………………………………………………… 190
6．3．2 Resonantsiliconmicromechanicalpressuresensoranditsdevelopment … 193
6．4 MeasurementofmicroGtorque ……………………………………………………… 198
6．4．1 Introduction …………………………………………………………………… 198
6．4．2 Workingprincipleofnoncontactmethod …………………………………… 199
6．4．3 Theoreticalcalculation ………………………………………………………… 200
6．4．4 Correspondingequipmenttorealizethenoncontactmethod ……………… 205
6．4．5 Experimentresultanddiscussion …………………………………………… 209
6．5 Microscopicmorphologytestingmethod ………………………………………… 211
6．6 Summary ……………………………………………………………………………… 212
References…………………………………………………………………………………… 212
Chapter7 Applicationexamplesofthefiniteelementmethodinthedesignof
MEMSdevices …………………………………………………………………… 218
7．1 Importantconceptsofthesoftware………………………………………………… 218
7．2 IntroductionoftheAnsyssoftwareinterface……………………………………… 220
7．3 ThecoordinatesysteminAnsys …………………………………………………… 221
7．4 Engineeringexamples ……………………………………………………………… 226
7．4．1 StaticanalysisofsingleGclampedbeam ……………………………………… 226
7．4．2 ModalanalysisofdoubleGclampedbeam ……………………………………… 245
7．4．3 CapacitanceanalysisofMEMSelectrostaticcombfingersdrive …………… 257
7．4．4 Fatiguestrengthcalculationexample ………………………………………… 264
7．5 Summary ……………………………………………………………………………… 272
1．1 ConceptofMEMS ……………………………………………………………………… 1
1．2 DevelopmentofMEMS ………………………………………………………………… 4
1．3 MEMSCAD …………………………………………………………………………… 9
Chapter2 BasictheoryofMEMS …………………………………………………………… 12
2．1 TheoryofelectrostaticMEMScombactuators …………………………………… 12
2．1．1 Introduction ……………………………………………………………………… 12
2．1．2 Operatingprinciples …………………………………………………………… 13
2．1．3 Platecapacitortheoryinidealcondition ……………………………………… 14
2．1．4 ThemodifiedmodelofMEMSplatecapaciator ……………………………… 17
2．1．5 Calculationofelectrostaticcombdrivingforceinidealsituation …………… 24
2．1．6 Weakcapacitancedetectionmethodofelectrostaticcombdrive …………… 26
2．2 RelevanttheoreticalcalculationsfortheMEMScantileverbeam ………………… 34
2．2．1 Introduction ……………………………………………………………………… 34
2．2．2 Theoreticalcalculationmethodforcantileverbeam ………………………… 35
2．2．3 RelevanttheoreticalcalculationofaxialtensileandcompressiveonsingleGend
clampedbeams ………………………………………………………………… 36
2．2．4 RelatedtheoreticalcalculationsofdoubleGendclampedbeamsaxialtension
andcompression ………………………………………………………………… 40
2．3 MembranetheoryofMEMS ………………………………………………………… 47
2．3．1 Theoryofclampedaroundcirculardiaphragm ………………………………… 48
2．3．2 Theoryofclampedaroundrectangularflatdiaphragm ……………………… 49
References …………………………………………………………………………………… 52
Chapter3 MEMSmaterials …………………………………………………………………… 53
3．1 Monocrystallinesilicon ……………………………………………………………… 53
3．1．1 Introduction ……………………………………………………………………… 53
3．1．2 Crystalorientationofmonocrystallinesilicon ………………………………… 55
3．2 Polycrystallinesilicon ………………………………………………………………… 64
3．3 Silica …………………………………………………………………………………… 66
3．4 Piezoelectricmaterials ………………………………………………………………… 67
3．4．1 Piezoelectriceffectandinversepiezoelectriceffectofmaterials …………… 67
3．4．2 Quartzcrystal …………………………………………………………………… 68
3．4．3 Piezoelectricceramics …………………………………………………………… 73
3．5 OtherMEMSmaterials ……………………………………………………………… 75
3．6 Summary ……………………………………………………………………………… 76
Chapter4 MEMStechnology ………………………………………………………………… 77
4．1 MEMSlithographyprocess ………………………………………………………… 78
4．2 KeytechnologyofMEMSlithographyprocess …………………………………… 80
4．2．1 Wafercleaning …………………………………………………………………… 80
4．2．2 Siliconoxidation ………………………………………………………………… 80
4．2．3 Spincoatingprocess …………………………………………………………… 87
4．2．4 Prebaking ………………………………………………………………………… 90
4．2．5 Exposure ………………………………………………………………………… 92
4．2．6 Development ……………………………………………………………………… 94
4．2．7 Hardening ………………………………………………………………………… 96
4．2．8 FabricationoftheSiO2 window ………………………………………………… 97
4．3 SubsequentprocessofMEMS ……………………………………………………… 98
4．3．1 Bulksilicontechnology ………………………………………………………… 98
4．3．2 Surfacesiliconprocess ………………………………………………………… 103
4．3．3 LIGAtechnology ……………………………………………………………… 104
4．3．4 Sputteringtechnology ………………………………………………………… 105
4．3．5 LiftGoffprocess ………………………………………………………………… 107
4．4 Filmpreparationtechnology………………………………………………………… 107
4．5 Bondingprocess ……………………………………………………………………… 108
4．5．1 Anodicbondingprocess………………………………………………………… 109
4．5．2 SiliconGsilicondirectbonding ………………………………………………… 110
4．5．3 Metaleutecticbonding ………………………………………………………… 113
4．5．4 Coldpressureweldingbonding ……………………………………………… 114
4．6 Engineeringexamplesofcombinationformultipleprocessestofabricatethe
MEMSdevice ………………………………………………………………………… 115
4．6．1 Introduction …………………………………………………………………… 115
4．6．2 EngineeringexampleoffabricationprocessforresonantMEMSgyroscope
…………………………………………………………………………………… 115
4．6．3 EngineeringexampleofelectromagneticmicroGmotorproductionprocess
…………………………………………………………………………………… 118
4．7 Summary ……………………………………………………………………………… 124
References…………………………………………………………………………………… 125
Chapter5 Frictionwearandtearundermicroscale ……………………………………… 126
5．1 OffGchiptestingmethodformicrofriction ………………………………………… 127
5．1．1 MicroGtribologytestwiththepinGonGdiscmeasuringmethod ……………… 127
5．1．2 MicroGtribologytestwithAFM ……………………………………………… 128
5．1．3 MicroGtribologytestwithspecialmeasuringdevice ………………………… 130
5．2 OnGchiptestingmethodformicrofriction ………………………………………… 132
5．2．1 OnGchiptestingmethodactuatedbyelectrostaticforce …………………… 132
5．2．2 OnGchipmicroGfrictiontestingmethodusingthemechanismcharactersof
thebimorphmaterial…………………………………………………………… 139
5．3 ExampleofthedesignforanonGchipmicroGfrictionstructure ………………… 141
5．3．1 Structureandworkingprinciple ……………………………………………… 141
5．3．2 Calculationofpertinenttheory ……………………………………………… 142
5．3．3 Technologicalanalysisofstructuraldesign ………………………………… 148
5．3．4 Testingresultsanddataanalysis……………………………………………… 152
5．3．5 ResearchandtestofwearproblemofMEMSdevices ……………………… 161
5．4 Summary ……………………………………………………………………………… 165
References…………………………………………………………………………………… 165
Chapter6 MEMStestingtechnologyandengineeringapplication ………………………… 169
6．1 Accelerationmeasurementandcorrespondingsensors …………………………… 169
6．1．1 Workingprincipleoftheaccelerationsensorandtheclassification ……… 170
6．1．2 Capacitivesiliconmicromechanicalaccelerometer …………………………… 172
6．1．3 Piezoresistivesiliconmicromechanicalaccelerometer ……………………… 173
6．1．4 Piezoelectricmicromechanicalaccelerometer ………………………………… 174
6．1．5 ResonantsiliconMEMSaccelerometer ……………………………………… 175
6．2 Angularspeedmeasurementandcorrespondingsensors ………………………… 177
6．2．1 Workingprinciple ……………………………………………………………… 177
6．2．2 DevelopmentofMEMSgyroscope …………………………………………… 178
6．2．3 Classificationofmicromechanicalgyroscope ………………………………… 188
6．3 Pressuremeasurementandcorrespondingsensors ……………………………… 190
6．3．1 Workingpincinple ……………………………………………………………… 190
6．3．2 Resonantsiliconmicromechanicalpressuresensoranditsdevelopment … 193
6．4 MeasurementofmicroGtorque ……………………………………………………… 198
6．4．1 Introduction …………………………………………………………………… 198
6．4．2 Workingprincipleofnoncontactmethod …………………………………… 199
6．4．3 Theoreticalcalculation ………………………………………………………… 200
6．4．4 Correspondingequipmenttorealizethenoncontactmethod ……………… 205
6．4．5 Experimentresultanddiscussion …………………………………………… 209
6．5 Microscopicmorphologytestingmethod ………………………………………… 211
6．6 Summary ……………………………………………………………………………… 212
References…………………………………………………………………………………… 212
Chapter7 Applicationexamplesofthefiniteelementmethodinthedesignof
MEMSdevices …………………………………………………………………… 218
7．1 Importantconceptsofthesoftware………………………………………………… 218
7．2 IntroductionoftheAnsyssoftwareinterface……………………………………… 220
7．3 ThecoordinatesysteminAnsys …………………………………………………… 221
7．4 Engineeringexamples ……………………………………………………………… 226
7．4．1 StaticanalysisofsingleGclampedbeam ……………………………………… 226
7．4．2 ModalanalysisofdoubleGclampedbeam ……………………………………… 245
7．4．3 CapacitanceanalysisofMEMSelectrostaticcombfingersdrive …………… 257
7．4．4 Fatiguestrengthcalculationexample ………………………………………… 264
7．5 Summary ……………………………………………………………………………… 272
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