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半導體物理性能手冊-第1卷 版權信息
- ISBN：9787560345130
- 條形碼：9787560345130 ; 978-7-5603-4513-0
- 裝幀：一般膠版紙
- 冊數：暫無
- 重量：暫無
- 所屬分類：>>
半導體物理性能手冊-第1卷 本書特色
《半導體物理性能手冊(第1卷)(英文版)》系springer手冊精選原版系列。《半導體物理性能手冊(第1卷)(英文版)》主要包括diamond（c）、silicon（si）、germanium（c）、gray tin（a—sn）、cubic silicon carbide（3c—sic）、hexagonal silicon carbide（2h—，4h—，6h—sic，etc.）、rhombohedral silicon carbide（15r—，21r—，24r—sic，etc.）等內容。
半導體物理性能手冊-第1卷 內容簡介
足立貞夫所著的《半導體物理性能手冊》介紹了各族半導體、化合物半導體的物理性能，包括：StructuralProperties結構特性ThermalProperties熱學性質ElasticProperties彈性性質PhononsandLatticeVibronicProperties聲子與晶格振動性質CollectiveEffectsandRelatedProperties集體效應及相關性質Energy-BandStructure：Energy-BandGaps能帶結構：能帶隙Energy-BandStructure：ElectronandHoleEffectiveMasses能帶結構：電子和空穴的有效質量ElectronicDeformationPotential電子形變勢ElectronAffinityandSchottkyBarrierHeight電子親和能與肖特基勢壘高度OpticalProperties光學性質Elastooptic，Electrooptic，andNonlinearOpticalProperties彈光、電光和非線性光學性質CartierTransportProperties載流子輸運性質、適用對象包括材料、微電子學、電子科學與技術等專業的本科生和研究生，以及從事半導體研究的專業人員。
半導體物理性能手冊-第1卷 目錄
preface
acknowledgments
contents of other volumes
1 diamond （c）
1.1 structural properties
1.1.1 ionicity
1.1.2 elemental isotopic abundance and molecular weight
1.1.3 crystal structure and space group
1.1.4 lattice constant and its related parameters
1.1.5 structural phase transition
1.1.6 cleavage plane
1.2 thermal properties
1.2.1 melting point and its related parameters
1.2.2 specific heat
1.2.3 debye temperature
1.2.4 thermal expansion coefficient
1.2.5 thermal conductivity and diffusivity
1.3 elastic properties
1.3.1 elastic constant
1.3.2 third—order elastic constant
1.3.3 young's modulus， poisson's ratio， and similar
1.3.4 microhardness
1.3.5 sound velocity
1.4 phonons and lattice vibronic properties
1.4.1 phonon dispersion relation
1.4.2 phonon frequency
1.4.3 mode gruneisen parameter
1.4.4 phonon deformation potential
1.5 collective effects and related properties
1.5.1 piezoelectric constant
1.5.2 frohlich coupling constant
1.6 energy—band structure： energy—band gaps
1.6.1 basic properties
1.6.2 e0—gap region
1.6.3 higher—lying direct gap
1.6.4 lowest indirect gap
1.6.5 conduction—valley energy separation
1.6.6 direct—indirect—gap transition pressure
1.7 energy—band structure： electron and hole effective masses
1.7.1 electron effective mass： γ valley
1.7.2 electron effective mass： satellite valley
1.7.3 hole effective mass
1.8 electronic deformation potential
1.8.1 intravalley deformation potential： γ point
1.8.2 intravalley deformation potential： high—symmetry points
1.8.3 intervalley deformation potential
1.9 electron affinity and schottky barrier height
1.9.1 electron affinity
1.9.2 schottky barrier height
1.10 optical properties
1.10.1 summary of optical dispersion relations
1.10.2 the reststrahlen region
1.10.3 at or near the fundamental absorption edge
1.10.4 the interband transition region
1.10.5 free—carrier absorption and related phenomena
1.11 elastooptic， electrooptic， and nonlinear optical properties
1.11.1 elastooptic effect
1.11.2 linear electrooptic constant
1.11.3 quadratic electrooptic constant
1.11.4 franz—keldysh effect
1.11.5 nonlinear optical constant
1.12 carrier transport properties
1.12.1 low—field mobility： electrons
1.12.2 low—field mobility： holes
1.12.3 high—field transport： electrons
1.12.4 high—field transport： holes
1.12.5 minority—carrier transport： electrons in ρ—type materials
1.12.6 minority—carrier transport： holes in n—type materials
1.12.7 impact ionization coefficient
2 silicon （si）
2.1 structural properties
2.1.1 ionicity
2.1.2 elemental isotopic abundance and molecular weight
2.1.3 crystal structure and space group
2.1.4 lattice constant and its related parameters
2.1.5 structural phase transition
2.1.6 cleavage plane
2.2 thermal properties
2.2.1 melting point and its related parameters
2.2.2 specific heat
2.2.3 debye temperature
2.2.4 thermal expansion coefficient
2.2.5 thermal conductivity and diffusivity
2.3 elastic properties
2.3.1 elastic constant
2.3.2 third—order elastic constant
2.3.3 young's modulus， poisson's ratio， and similar
2.3.4 microhardness
2.3.5 sound velocity
2.4 phonons and lattice vibronic properties
2.4.1 phonon dispersion relation
2.4.2 phonon frequency
2.4.3 mode gruneisen parameter
2.4.4 phonon deformation potential
2.5 collective effects and related properties
2.5.1 piezoelectric constant
2.5.2 frohlich coupling constant
2.6 energy—band structure： energy—band gaps
2.6.1 basic properties
2.6.2 e0—gap region
2.6.3 higher—lying direct gap
2.6.4 lowest indirect gap
2.6.5 conduction—valley energy separation
2.6.6 direct—indirect—gap transition pressure
2.7 energy—band structure： electron and hole effective masses
2.7.1 electron effective mass： γ valley
2.7.2 electron effective mass： satellite valley
2.7.3 hole effective mass
2.8 electronic deformation potential
2.8.1 intravalley deformation potential： γ point
2.8.2 intravalley deformation potential： high—symmetry points
2.8.3 intervalley deformation potential
2.9 electron affinity and schottky barrier height
2.9.1 electron affinity
2.9.2 schottky barrier height
2.10 optical properties
2.10.1 summary of optical dispersion relations
2.10.2 the reststrahlen region
2.10.3 at or near the fundamental absorption edge
2.10.4 the interband transition region
2.10.5 free—carrier absorption and related phenomena
2.11 elastooptic， electrooptic， and nonlinear optical properties
2.11.1 elastooptic effect
2.11.2 linear electrooptic constant
2.11.3 quadratic electrooptic constant
2.11.4 franz—keldysh effect
2.11.5 nonlinear optical constant
2.12 carrier transport properties
2.12.1 low—field mobility： electrons
2.12.2 low—field mobility： holes
2.12.3 high—field transport： electrons
2.12.4 high—field transport： holes
2.12.5 minority—carrier transport： electrons in p—type materials
2.12.6 minority—carrier transport： holes in n—type materials
2.12.7 impact ionization coefficient
3 germanium （c）
3.1 structural properties
3.1.1 ionicity
3.1.2 elemental isotopic abundance and molecular weight
3.1.3 crystal structure and space group
3.1.4 lattice constant and its related parameters
3.1.5 structural phase transition
3.1.6 cleavage plane
3.2 thermal properties
3.2.1 melting point and its related parameters
3.2.2 specific heat
3.2.3 debye temperature
3.2.4 thermal expansion coefficient
3.2.5 thermal conductivity and diffusivity
3.3 elastic properties
3.3，1 elastic constant
3.3.2 third—order elastic constant
3.3.3 young's modulus， poisson's ratio， and similar
3.3.4 microhardness
3.3.5 sound velocity
3.4 phonons and lattice vibronic properties
3.4.1 phonon dispersion relation
3.4.2 phonon frequency
3.4.3 mode gruneisen parameter
3.4.4 phonon deformation potential
3.5 collective effects and related properties
3.5.1 piezoelectric constant
3.5.2 frohlich coupling constant
3.6 energy—band structure： energy—band gaps
3.6.1 basic properties
3.6.2 eo—gap region
3.6.3 higher—lying direct gap
3.6.4 lowest indirect gap
3.6.5 conduction—valley energy separation
3.6.6 direct—indirect—gap transition pressure
3.7 energy—band structure： electron and hole effective masses
3.7.1 electron effective mass： f valiey
3.7.2 electron effective mass： satellite valley
3.7.3 hole effective mass
3.8 electronic deformation potential
3.8.1 intravalley deformation potential： γ point
3.8.2 intravalley deformation potential： high—symmetry points
3.8.3 intervalley deformation potential
3.9 electron affinity and schottky barrier height
3.9.1 electron affinity
3.9.2 schottky barrier height
3.10 optical properties
3.10.1 summary of optical dispersion relations
3.10.2 the reststrahlen region
3.10.3 at or near the fundamental absorption edge
3.10.4 the interband transition region
3.10.5 free—carrier absorption and related phenomena
3.11 elastooptic， electrooptic， and nonlinear optical properties
3.11.1 elastooptic effect
3.11.2 linear electrooptic constant
3.11.3 quadratic electrooptic constant
3.11.4 franz—keldysh effect
3.11.5 nonlinear optical constant
3.12 carrier transport properties
3.12.1 low—field mobility： electrons
3.12.2 low—field mobility： holes
3.12.3 high—field transport： electrons
3.12.4 high—field transport： holes
3.12.5 minority—carrier transport： electrons in p—type materials
3.12.6 minority—carrier transport： holes in n—type materials
3.12.7 impact ionization coefficient
4 gray tin （a—sn）
4.1 structural properties
4.1.1 lonicity
4.1.2 elemental isotopic abundance and molecular weight
4.1.3 crystal structure and space group
4.1.4 lattice constant and its related parameters
4.1.5 structural phase transition
4.1.6 cleavage plane
4.2 thermal properties
4.2.1 melting point and its related parameters
4.2.2 specific heat
4.2.3 debye temperature
4.2.4 thermal expansion coefficient
4.2.5 thermal conductivity and diffusivity
4.3 elastic properties
4.3.1 elastic constant
4.3.2 third—order elastic constant
4.3.3 young's modulus， poisson's ratio， and similar
4.3.4 microhardness
4.3.5 sound velocity
4.4 phonons and lattice vibronic properties
4.4.1 phonon dispersion relation
4.4.2 phonon frequency
4.4.3 mode gruneisen parameter
4.4.4 phonon deformation potential
4.5 collective effects and related properties
4.5.1 piezoelectric constant
4.5.2 frohlich coupling constant
4.6 energy—band structure： energy—band gaps
4.6.1 basic properties
4.6.2 eo—gap region
4.6.3 higher—lying direct gap
4.6.4 lowest indirect gap
4.6.5 conduction—valley energy separation
4.6.6 direct—indirect—gap transition pressure
4.7 energy—band structure： electron and hole effective masses
4.7.1 electron effective mass： γ valley
4.7.2 electron effective mass： satellite valley
4.7.3 hole effective mass
4.8 electronic deformation potential
4.8.1 intravalley deformation potential： γ point
4.8.2 intravalley deformation potential： high—symmetry points
4.8.3 intervalley deformation potential
4.9 electron affinity and schottky barrier height
4.9.1 electron affinity
4.9.2 schottky barrier height
4.10 optical properties
4.10.1 summary of optical dispersion relations
4.10.2 the reststrahlen region
4.10.3 at or near the fundamental absorption edge
4.10.4 the interband transition region
4.10.5 free—carrier absorption and related phenomena
4.11 elastooptic， electrooptic， and nonlinear optical properties
4.11.1 elastooptic effect
4.11.2 linear electrooptic constant
4.11.3 quadratic electrooptic constant
4.11.4 franz—keldysh effect
4.11.5 nonlinear optical constant
4.12 carrier transport properties
4.12.1 low—field mobility： electrons
4.12.2 low—field mobility： holes
4.12.3 high—field transport： electrons
4.12.4 high—field transport： holes
4.12.5 minority—carrier transport： electrons in p—type materials
4.12.6 minority—carrier transport： holes in n—type materials
4.12.7 impact ionization coefficient
……
5 cubic silicon carbide （3c—sic）
6 hexagonal silicon carbide （2h—， 4h—， 6h—sic， etc.）
7 rhombohedral silicon carbide （15r—， 21r—， 24r—sic， etc.）
acknowledgments
contents of other volumes
1 diamond （c）
1.1 structural properties
1.1.1 ionicity
1.1.2 elemental isotopic abundance and molecular weight
1.1.3 crystal structure and space group
1.1.4 lattice constant and its related parameters
1.1.5 structural phase transition
1.1.6 cleavage plane
1.2 thermal properties
1.2.1 melting point and its related parameters
1.2.2 specific heat
1.2.3 debye temperature
1.2.4 thermal expansion coefficient
1.2.5 thermal conductivity and diffusivity
1.3 elastic properties
1.3.1 elastic constant
1.3.2 third—order elastic constant
1.3.3 young's modulus， poisson's ratio， and similar
1.3.4 microhardness
1.3.5 sound velocity
1.4 phonons and lattice vibronic properties
1.4.1 phonon dispersion relation
1.4.2 phonon frequency
1.4.3 mode gruneisen parameter
1.4.4 phonon deformation potential
1.5 collective effects and related properties
1.5.1 piezoelectric constant
1.5.2 frohlich coupling constant
1.6 energy—band structure： energy—band gaps
1.6.1 basic properties
1.6.2 e0—gap region
1.6.3 higher—lying direct gap
1.6.4 lowest indirect gap
1.6.5 conduction—valley energy separation
1.6.6 direct—indirect—gap transition pressure
1.7 energy—band structure： electron and hole effective masses
1.7.1 electron effective mass： γ valley
1.7.2 electron effective mass： satellite valley
1.7.3 hole effective mass
1.8 electronic deformation potential
1.8.1 intravalley deformation potential： γ point
1.8.2 intravalley deformation potential： high—symmetry points
1.8.3 intervalley deformation potential
1.9 electron affinity and schottky barrier height
1.9.1 electron affinity
1.9.2 schottky barrier height
1.10 optical properties
1.10.1 summary of optical dispersion relations
1.10.2 the reststrahlen region
1.10.3 at or near the fundamental absorption edge
1.10.4 the interband transition region
1.10.5 free—carrier absorption and related phenomena
1.11 elastooptic， electrooptic， and nonlinear optical properties
1.11.1 elastooptic effect
1.11.2 linear electrooptic constant
1.11.3 quadratic electrooptic constant
1.11.4 franz—keldysh effect
1.11.5 nonlinear optical constant
1.12 carrier transport properties
1.12.1 low—field mobility： electrons
1.12.2 low—field mobility： holes
1.12.3 high—field transport： electrons
1.12.4 high—field transport： holes
1.12.5 minority—carrier transport： electrons in ρ—type materials
1.12.6 minority—carrier transport： holes in n—type materials
1.12.7 impact ionization coefficient
2 silicon （si）
2.1 structural properties
2.1.1 ionicity
2.1.2 elemental isotopic abundance and molecular weight
2.1.3 crystal structure and space group
2.1.4 lattice constant and its related parameters
2.1.5 structural phase transition
2.1.6 cleavage plane
2.2 thermal properties
2.2.1 melting point and its related parameters
2.2.2 specific heat
2.2.3 debye temperature
2.2.4 thermal expansion coefficient
2.2.5 thermal conductivity and diffusivity
2.3 elastic properties
2.3.1 elastic constant
2.3.2 third—order elastic constant
2.3.3 young's modulus， poisson's ratio， and similar
2.3.4 microhardness
2.3.5 sound velocity
2.4 phonons and lattice vibronic properties
2.4.1 phonon dispersion relation
2.4.2 phonon frequency
2.4.3 mode gruneisen parameter
2.4.4 phonon deformation potential
2.5 collective effects and related properties
2.5.1 piezoelectric constant
2.5.2 frohlich coupling constant
2.6 energy—band structure： energy—band gaps
2.6.1 basic properties
2.6.2 e0—gap region
2.6.3 higher—lying direct gap
2.6.4 lowest indirect gap
2.6.5 conduction—valley energy separation
2.6.6 direct—indirect—gap transition pressure
2.7 energy—band structure： electron and hole effective masses
2.7.1 electron effective mass： γ valley
2.7.2 electron effective mass： satellite valley
2.7.3 hole effective mass
2.8 electronic deformation potential
2.8.1 intravalley deformation potential： γ point
2.8.2 intravalley deformation potential： high—symmetry points
2.8.3 intervalley deformation potential
2.9 electron affinity and schottky barrier height
2.9.1 electron affinity
2.9.2 schottky barrier height
2.10 optical properties
2.10.1 summary of optical dispersion relations
2.10.2 the reststrahlen region
2.10.3 at or near the fundamental absorption edge
2.10.4 the interband transition region
2.10.5 free—carrier absorption and related phenomena
2.11 elastooptic， electrooptic， and nonlinear optical properties
2.11.1 elastooptic effect
2.11.2 linear electrooptic constant
2.11.3 quadratic electrooptic constant
2.11.4 franz—keldysh effect
2.11.5 nonlinear optical constant
2.12 carrier transport properties
2.12.1 low—field mobility： electrons
2.12.2 low—field mobility： holes
2.12.3 high—field transport： electrons
2.12.4 high—field transport： holes
2.12.5 minority—carrier transport： electrons in p—type materials
2.12.6 minority—carrier transport： holes in n—type materials
2.12.7 impact ionization coefficient
3 germanium （c）
3.1 structural properties
3.1.1 ionicity
3.1.2 elemental isotopic abundance and molecular weight
3.1.3 crystal structure and space group
3.1.4 lattice constant and its related parameters
3.1.5 structural phase transition
3.1.6 cleavage plane
3.2 thermal properties
3.2.1 melting point and its related parameters
3.2.2 specific heat
3.2.3 debye temperature
3.2.4 thermal expansion coefficient
3.2.5 thermal conductivity and diffusivity
3.3 elastic properties
3.3，1 elastic constant
3.3.2 third—order elastic constant
3.3.3 young's modulus， poisson's ratio， and similar
3.3.4 microhardness
3.3.5 sound velocity
3.4 phonons and lattice vibronic properties
3.4.1 phonon dispersion relation
3.4.2 phonon frequency
3.4.3 mode gruneisen parameter
3.4.4 phonon deformation potential
3.5 collective effects and related properties
3.5.1 piezoelectric constant
3.5.2 frohlich coupling constant
3.6 energy—band structure： energy—band gaps
3.6.1 basic properties
3.6.2 eo—gap region
3.6.3 higher—lying direct gap
3.6.4 lowest indirect gap
3.6.5 conduction—valley energy separation
3.6.6 direct—indirect—gap transition pressure
3.7 energy—band structure： electron and hole effective masses
3.7.1 electron effective mass： f valiey
3.7.2 electron effective mass： satellite valley
3.7.3 hole effective mass
3.8 electronic deformation potential
3.8.1 intravalley deformation potential： γ point
3.8.2 intravalley deformation potential： high—symmetry points
3.8.3 intervalley deformation potential
3.9 electron affinity and schottky barrier height
3.9.1 electron affinity
3.9.2 schottky barrier height
3.10 optical properties
3.10.1 summary of optical dispersion relations
3.10.2 the reststrahlen region
3.10.3 at or near the fundamental absorption edge
3.10.4 the interband transition region
3.10.5 free—carrier absorption and related phenomena
3.11 elastooptic， electrooptic， and nonlinear optical properties
3.11.1 elastooptic effect
3.11.2 linear electrooptic constant
3.11.3 quadratic electrooptic constant
3.11.4 franz—keldysh effect
3.11.5 nonlinear optical constant
3.12 carrier transport properties
3.12.1 low—field mobility： electrons
3.12.2 low—field mobility： holes
3.12.3 high—field transport： electrons
3.12.4 high—field transport： holes
3.12.5 minority—carrier transport： electrons in p—type materials
3.12.6 minority—carrier transport： holes in n—type materials
3.12.7 impact ionization coefficient
4 gray tin （a—sn）
4.1 structural properties
4.1.1 lonicity
4.1.2 elemental isotopic abundance and molecular weight
4.1.3 crystal structure and space group
4.1.4 lattice constant and its related parameters
4.1.5 structural phase transition
4.1.6 cleavage plane
4.2 thermal properties
4.2.1 melting point and its related parameters
4.2.2 specific heat
4.2.3 debye temperature
4.2.4 thermal expansion coefficient
4.2.5 thermal conductivity and diffusivity
4.3 elastic properties
4.3.1 elastic constant
4.3.2 third—order elastic constant
4.3.3 young's modulus， poisson's ratio， and similar
4.3.4 microhardness
4.3.5 sound velocity
4.4 phonons and lattice vibronic properties
4.4.1 phonon dispersion relation
4.4.2 phonon frequency
4.4.3 mode gruneisen parameter
4.4.4 phonon deformation potential
4.5 collective effects and related properties
4.5.1 piezoelectric constant
4.5.2 frohlich coupling constant
4.6 energy—band structure： energy—band gaps
4.6.1 basic properties
4.6.2 eo—gap region
4.6.3 higher—lying direct gap
4.6.4 lowest indirect gap
4.6.5 conduction—valley energy separation
4.6.6 direct—indirect—gap transition pressure
4.7 energy—band structure： electron and hole effective masses
4.7.1 electron effective mass： γ valley
4.7.2 electron effective mass： satellite valley
4.7.3 hole effective mass
4.8 electronic deformation potential
4.8.1 intravalley deformation potential： γ point
4.8.2 intravalley deformation potential： high—symmetry points
4.8.3 intervalley deformation potential
4.9 electron affinity and schottky barrier height
4.9.1 electron affinity
4.9.2 schottky barrier height
4.10 optical properties
4.10.1 summary of optical dispersion relations
4.10.2 the reststrahlen region
4.10.3 at or near the fundamental absorption edge
4.10.4 the interband transition region
4.10.5 free—carrier absorption and related phenomena
4.11 elastooptic， electrooptic， and nonlinear optical properties
4.11.1 elastooptic effect
4.11.2 linear electrooptic constant
4.11.3 quadratic electrooptic constant
4.11.4 franz—keldysh effect
4.11.5 nonlinear optical constant
4.12 carrier transport properties
4.12.1 low—field mobility： electrons
4.12.2 low—field mobility： holes
4.12.3 high—field transport： electrons
4.12.4 high—field transport： holes
4.12.5 minority—carrier transport： electrons in p—type materials
4.12.6 minority—carrier transport： holes in n—type materials
4.12.7 impact ionization coefficient
……
5 cubic silicon carbide （3c—sic）
6 hexagonal silicon carbide （2h—， 4h—， 6h—sic， etc.）
7 rhombohedral silicon carbide （15r—， 21r—， 24r—sic， etc.）
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