chapter 1 introduction/1
1.1 importance of radio frequency design/2
1.2 dimensions and units/5
1.3 frequency spectrum/7
1.4 rf behavior of passive components/8
1.4.1 resistors at high frequency/13
1.4.2 capacitors at high frequency/15
1.4.3 inductors at high frequency/18
1.5 chip components and circuit board considerations/20
1.5.1 chip resistors/20
1.5.2 chip capacitors/21
1.5.3 surface-mounted inductors/22
1.6 rf circuit manufacturing processes/22
1.7 summary/25
chapter 2 transmission line analysis/33
2.1 why transmission line theory?/33
2.2 examples of transmission lines/36
2.2.1 two-wire lines/36
2.2.2 coaxial line/37
2.2.3 microstrip lines/37
2.3 equivalent circuit representation/39
2.4 theoretical foundation/41
2.4.1 basic laws/41
2.5 circuit parameters for a parallel-plate transmission line/46
2.6 summary of different line configurations/49
2.7 general transmission line equation/49
2.7.1 kirchhoff voltage and current law representations/49
2.7.2 traveling voltage and current waves/53
2.7.3 characteristic impedance/53
2.7.4 lossless transmission line model/54
2.8 microstrip transmission lines/54
2.9 terminated lossless transmission line/58
2.9.1 voltage reflection coefficient/58
2.9.2 propagation constant and phase velocity/60
2.9.3 standing waves/60
2.10 special termination conditions/63
2.10.1 input impedance of terminated lossless line/63
2.10.2 short-circuit terminated transmission line/64
2.10.3 open-circuited transmission line/66
2.10.4 quarter-wave transmission line/67
2.11 sourced and loaded transmission line/70
2.11.1 phasor representation of source/70
2.11.2 power considerations for a transmission line/71
2.11.3 input impedance matching/73
2.11.4 return loss and insertion loss/74
2.12 summary/76
chapter 3 the smith chart/83
3.1 from reflection coefficient to load impedance/83
3.1.1 reflection coefficient in phasor form/84
3.1.2 normalized impedance equation/85
3.1.3 parametric reflection coefficient equation/86
3.1.4 graphical representation/89
3.2 impedance transformation/90
3.2.1 impedance transformation for general load/90
3.2.2 standing wave ratio/92
3.2.3 special transformation conditions/93
3.2.4 computer simulations/97
3.3 admittance transformation/98
3.3.1 parametric admittance equation/98
3.3.2 additional graphical displays/101
3.4 parallel and series connections/102
3.4.1 parallel connection of r and l elements/102
3.4.2 parallel connection of r and c elements/103
3.4.3 series connection of r and l elements/103
3.4.4 series connection of r and c elements/104
3.4.5 example of a t-network/105
3.5 summary/109
chapter 4 single- and multiport networks/117
4.1 basic definitions/117
4.2 interconnecting networks/124
4.2.1 series connection of networks/124
4.2.2 parallel connection of networks/126
4.2.3 cascading networks/126
4.2.4 summary of abcd network representations/127
4.3 network properties and applications/131
4.3.1 interrelations between parameter sets/131
4.3.2 analysis of microwave amplifier/132
4.4 scattering parameters/135
4.4.1 definition of scattering parameters/136
4.4.2 meaning of s-parameters/138
4.4.3 chain scattering matrix/140
4.4.4 conversion between z- and s-parameters/142
4.4.5 signal flowgraph modeling/143
4.4.6 generalization of s-parameters/148
4.4.7 practical measurements of s-parameters/150
4.5 summary/156
chapter 5 an overview of rf filter design/164
5.1 basic resonator and filter configurations/165
5.1.1 filter types and parameters/165
5.1.2 low-pass filter/168
5.1.3 high-pass filter/171
5.1.4 bandpass and bandstop filters/172
5.1.5 insertion loss/177
5.2 special filter realizations/180
5.2.1 butterworth-type filters/180
5.2.2 chebyshev-type filters/183
5.2.3 denormalization of standard low-pass design/188
5.3 filter implementation/196
5.3.1 unit elements/197
5.3.2 kuroda�s identities/198
5.3.3 examples of microstrip filter design/199
5.4 coupled filter/206
5.4.1 odd and even mode excitation/206
5.4.2 bandpass filter section/209
5.4.3 cascading bandpass filter elements/210
5.4.4 design example/211
5.5 summary/215
chapter 6 active rf components/223
6.1 semiconductor basics/224
6.1.1 physical properties of semiconductors/224
6.1.2 the pn-junction/229
6.1.3 schottky contact/236
6.2 rf diodes/239
6.2.1 schottky diode/239
6.2.2 pin diode/242
6.2.3 varactor diode/246
6.2.4 impatt diode/248
6.2.5 tunnel diode/250
6.2.6 trapatt, barritt, and gunn diodes/251
6.3 bipolar-junction transistor/252
6.3.1 construction/252
6.3.2 functionality/254
6.3.3 frequency response/259
6.3.4 temperature behavior/261
6.3.5 limiting values/264
6.3.6 noise performance/265
6.4 rf field effect transistors/266
6.4.1 construction/266
6.4.2 functionality/267
6.4.3 frequency response/272
6.4.4 limiting values/272
6.5 metal oxide semiconductor transistors/273
6.5.1 construction/273
6.5.2 functionality/274
6.6 high electron mobility transistors/275
6.6.1 construction/276
6.6.2 functionality/276
6.6.3 frequency response/279
6.7 semiconductor technology trends/279
6.8 summary/284
chapter 7 active rf component modeling/290
7.1 diode models/290
7.1.1 nonlinear diode model/290
7.1.2 linear diode model/293
7.2 transistor models/295
7.2.1 large-signal bjt models/295
7.2.2 small-signal bjt models/301
7.2.3 large-signal fet models/311
7.2.4 small-signal fet models/314
7.2.5 transistor amplifier topologies/317
7.3 measurement of active devices/318
7.3.1 dc characterization of bipolar transistor/318
7.3.2 measurements of ac parameters of bipolar transistors/320
7.3.3 measurements of field effect transistor parameters/323
7.4 scattering parameter device characterization/325
7.5 summary/332
chapter 8 matching and biasing networks/338
8.1 impedance matching using discrete components/338
8.1.1 two-component matching networks/338
8.1.2 forbidden regions, frequency response, and quality factor/346
8.1.3 t and pi matching networks/354
8.2 microstrip line matching networks/357
8.2.1 from discrete components to microstrip lines/357
8.2.2 single-stub matching networks/360
8.2.3 double-stub matching networks/364
8.3 amplifier classes of operation and biasing networks/366
8.3.1 classes of operation and efficiency of amplifiers/367
8.3.2 bipolar transistor biasing networks/371
8.3.3 field effect transistor biasing networks/376
8.4 summary/382
chapter 9 rf transistor amplifier design/387
9.1 characteristics of amplifiers/387
9.2 amplifier power relations/388
9.2.1 rf source/388
9.2.2 transducer power gain/389
9.2.3 additional power relations/390
9.3 stability considerations/392
9.3.1 stability circles/392
9.3.2 unconditional stability/395
9.3.3 stabilization methods/400
9.4 constant gain/402
9.4.1 unilateral design/402
9.4.2 unilateral figure of merit/407
9.4.3 bilateral design/408
9.4.4 operating and available power gain circles/411
9.5 noise figure circles/416
9.6 constant vswr circles/419
9.7 broadband, high-power, and multistage amplifiers/423
9.7.1 broadband amplifiers/423
9.7.2 high-power amplifiers/431
9.7.3 multistage amplifiers/434
9.8 summary/440
chapter 10 oscillators and mixers/446
10.1 basic oscillator models/447
10.1.1 feedback oscillator/447
10.1.2 negative resistance oscillator/448
10.1.3 oscillator phase noise/458
10.1.4 feedback oscillator design/463
10.1.5 design steps/465
10.1.6 quartz oscillators/468
10.2 high-frequency oscillator configuration/470
10.2.1 fixed-frequency oscillators/473
10.2.2 dielectric resonator oscillators/478
10.2.3 yig-tuned oscillator/482
10.2.4 voltage-controlled oscillator/483
10.2.5 gunn element oscillator/485
10.3 basic characteristics of mixers/486
10.3.1 basic concepts/487
10.3.2 frequency domain considerations/489
10.3.3 single-ended mixer design/490
10.3.4 single-balanced mixer/497
10.3.5 double-balanced mixer/498
10.3.6 integrated active mixers/498
10.3.7 image reject mixer/502
10.4 summary/512
appendix a useful physical quantities and units/517
appendix b skin equation for a cylindrical conductor/522
appendix c complex numbers/525
appendix d matrix conversions/527
appendix e physical parameters of semiconductors/530
appendix f long and short diode models/531
appendix g couplers/534
appendix h noise analysis/540
appendix i introduction to matlab/549